Method for forming dual-polysilicon structures using a built-in stop layer

ABSTRACT

A process for fabricating novel dual-polysilicon structures comprises forming trenches of differing depths in a field oxide that overlies a substrate. The trenches are formed using a stop layer so that the depth of the trenches may be precisely controlled. Utilizing an ion implantation barrier in the trenches, ion implantation is performed to create self-aligned structures. Importantly, polysilicon is formed in the trenches in a single deposition.

CROSS-REFERENCE TO RELATED APPLICATION

This application is related to application Ser. No. 09,140,275 entitled“Dual-Polysilicon Structures In Integrated Circuits And A Method ForMaking Them,” which was filed on Aug. 26, 1998 and application Ser. No.09,140,270 entitled, “A Capacitor In An Integrated Circuit And A MethodOf Manufacturing An Integrated Circuit,” which was filed on Aug. 26,1998

TECHNICAL FIELD

This invention relates to integrated circuits and, more specifically, todual-polysilicon structures in integrated circuits and a method formaking them.

BACKGROUND OF THE INVENTION

Device structures with dual layers of polysilicon over oxide layers ofdiffering thickness have many uses in integrated circuits such asDynamic Random Access Memory (DRAM) cells, Static Random Access Memory(SRAM) cells, etc. The process for manufacturing dual-polysiliconstructures currently requires multiple polysilicon depositions,patterning, and etches. Each deposition, patterning, and etch sequenceis both time consuming and costly.

Additionally, the multi-layered polysilicon structure produced by such aknown process yields an uneven topology upon which further processingsteps must typically be performed. Carrying out further steps on such anuneven topology can be difficult.

SUMMARY OF THE INVENTION

The present invention is directed to a new method for fabricatingdual-polysilicon structures and integrated circuits. The method usesfewer steps than those used in prior art processes. In accordance withthe invention, trenches of differing depths are formed in an insulatinglayer prior to depositing a polysilicon layer. The trenches are formedby forming a first insulating layer and a barrier layer above the firstinsulating layer. Subsequently, a second insulating layer is formedabove the barrier layer. A first trench is formed in the secondinsulating layer and a second trench is formed through the firstinsulating layer, the barrier layer, and the second insulating layer. Animplantation barrier is deposited in each trench, and then ionimplantation is performed to create self-aligned source and drainregions. Polysilicon, sufficient to fill the trenches, is then depositedand planarized. This process reduces the number of steps required toachieve a dual-polysilicon structure using a single polysiliconformation step. Additionally, the present invention provides a structurethat has a more level topography than that provided by prior artmethods.

BRIEF DESCRIPTION OF THE DRAWING

The invention will be more fully understood from the following detaileddescription taken in connection with the accompanying drawing, in which:

FIGS. 1 to 4 illustrate an integrated circuit during successive stagesof manufacture according to a first illustrative embodiment of thepresent invention;

FIG. 5 is a cross-section of a dual-polysilicon structure afterdeposition and etching of polysilicon, and after deposition andplanarization of an implantation barrier, according to a secondillustrative embodiment of the present invention;

FIGS. 6 to 10 illustrate an integrated circuit during successive stagesof manufacture according to a third illustrative embodiment of thepresent invention; and

FIGS. 11-13 illustrate exemplary circuits using the first through thirdembodiments.

DETAILED DESCRIPTION OF THE INVENTION

In accordance with the principles of the present invention, a new methodfor fabricating dual-polysilicon structures is characterized by areduction in the number of steps required to build this type ofstructure. The process includes fabricating at least two trenches ofdiffering depths and then performing a single polysilicon deposition andetch. Advantageously, these methods may also result in a structure witha planar or flattened topology. The individual steps of the new methodutilize standard processing techniques.

The first illustrative embodiment is described below with reference toFIGS. 1 to 4. Formed on the substrate 12 is an insulating layer 10.Insulating layer 10 may be SiO₂ and may have a substantially uniformdepth. The substrate may be silicon, gallium arsenide, germanium, orother material suitable for use as a substrate as is known to thoseskilled in this art. There may be one or more layers formed between thesubstrate 12 and the insulating layer 10. The thickness of theinsulating layer 10 varies based on the particular process andtechnology being used and the surface topology of the substrate 12. Atleast one trench 14 (two such trenches 14 are depicted in FIGS. 1 to 4)is then formed by patterning the area to be etched using standardsemiconductor photo-lithographic techniques and then etching (forexample, chemically) to form the trench 14. In particular, the trench 14is etched to a depth equal to that of the insulating layer 10. In otherwords, the trench 14 is etched to reveal the surface of the substrate12.

Illustratively, trench 14 is formed by: 1) applying a layer of resistmaterial on the insulating layer 10; 2) exposing the resist material toan energy source which passes through a pattern mask; 3) removing areasof resist to form the pattern in the resist; 4) etching the trench 14;and 5) removing the remaining resist material. The energy source may bean e-beam, light source, or other suitable energy source.

After formation of the first trench 14, a second trench 20, shown inFIG. 2, is formed in the insulating layer 10. The second trench 20 has adepth that is less than the depth of the first trench 14, and thereforehas a base that sits above a remaining thickness of the insulating layer10. The second trench 20 may be formed using the process described aboveto form the first trench 14. The depth of second trench 20 or thethickness of the insulating layer 10 remaining underneath the secondtrench 20 is dependent upon the desired characteristics of the structurebeing fabricated.

Using standard processing techniques, a relatively thin secondinsulating layer 24, shown in FIG. 2, is then formed at the base of thefirst trench 14 and at the base of the second trench 20. The secondinsulating layer 24 may be SiO₂ and may be formed in each trench atsubstantially the same time. The insulating layer 24 formed at the baseof the first trench 14 may sit directly on top of the substrate 12.

As depicted in FIG. 3, an implantation barrier 30 is then deposited tofill the trenches 14 and 20. The implantation barrier 30 comprises anymaterial, which will not allow implanted ions to penetrate into thesecond insulating layer 24. Typical materials used for the implantationbarrier 30 include: silicon nitride, tantalum nitride, titanium nitride,tungsten nitride, and zirconium nitride. After being deposited in ablanket fashion, the implantation barrier material is processed to makethe surface of the implantation barrier 30 co-planar or substantiallyco-planar with the surface of the first insulating layer 10. Forexample, this is accomplished by a conventional chemical-mechanicalpolishing (CMP) technique or other planarization techniques.

Ion implantation is then performed to create a lightly doped diffusion(LDD) region as represented by region 32 in FIG. 3. Following creationof the LDD region 32, the structure is annealed. Transistor source anddrain implants are then performed and the structure is again annealedfollowing these further implants. Alternatively, the annealing may occurafter all the implants are complete. Source and drain regions 34 areshown in FIG. 3. The choices of ions and their associated implantationenergies are determined by the desired electrical characteristics of theresulting device. It should be noted that the ion implantation isperformed in accordance with standard processing techniques (forexample, through a mask of photo-resistive material that has beenpatterned to reveal the desired implant regions.)

The implantation barrier 30 of FIG. 3 is then removed by performing anetch (for example, chemical) which selectively attacks the implantationbarrier 30 but leaves the insulating layer 10. The trench oxide 24 isalso removed. For example, when the implantation barrier 30 is composedof silicon nitride, the implantation barrier 30 can be etched withphosphoric acid. Removal of the implantation barrier 30 and the oxide 24reopens both the first trench 14 and the second trench 20.

Next, oxidation may be performed to for an oxide layer 124, shown inFIG. 4, using conventional techniques. The oxide layer 124 is, forexample, SiO₂. The oxide layer 124 in the trench 14 may constitute thegate oxide layer of a metal-oxide-semiconductor (MOS) transistor. Thethickness of the oxide layer 124 is determined by the desiredcharacteristics of the structure. The purpose of the oxide layer 124 inthe second trench 20 varies based on the application as described below.In an alternative embodiment, the insulating layer 24 may not be removedand used as a gate oxide.

Subsequently, a polysilicon layer 40, shown in FIG. 4, is formed. Morespecifically, after a blanket deposition of polysilicon, the surface ofthe polysilicon layer is processed (for example, by CMP) to make thesurface of the polysilicon layer 40 co-planar or substantially co-planarwith the surface of the first insulating layer 10. This creates thedual-polysilicon structure depicted in FIG. 4.

The particular illustrative structure in FIG. 4 includes two MOStransistors respectively aligned with the trenches 14. Further, thepolysilicon layer 40 formed in the shallow trench 20 may be used tocreate: 1) a capacitor, when used in conjunction with the oxides 124 and10 and the substrate 12, 2) a resistor, or 3) a transistor with a gateoxide, comprised of insulating layers 124 and 10, that is thicker thanthat of the device formed in trench 14. In addition, these structuresmay be used to form analog devices. In an actual device, electricalconnections (not shown) are made in conventional ways to the polysilicon40 and to the source and drain regions 34.

FIG. 5 illustrates a second embodiment of the present invention. Theinitial steps for forming the second embodiment are the same as thesteps shown in FIGS. 1 and 2 of the first embodiment. After the trenches14 and 20 are formed, an insulating layer 24 is formed at the base ofthe first trench 14 and at the base of the second trench 20. Theinsulating layer 24 is, for example, SiO₂. The insulating layer 24 thatis formed at the base of the first trench 14 sits directly on top of thesurface of the substrate 12. The insulating layer 24 in the trench 14may constitute the gate oxide layer in a conventional MOS transistor.The thickness of the insulating layer 24 is determined by the desiredcharacteristics of the structure. The insulating layer 24 at the base ofthe trench 20 functions in the same manner as described in the previousembodiment and may be SiO₂.

Next, as is shown in FIG. 5, a polysilicon layer 50 is then deposited ina blanket fashion. The surface of the deposited polysilicon layer isthen processed (for example, using CMP) to make the surface of thepolysilicon layer 50 co-planar or substantially co-planar with thesurface of the first insulating layer 10. After planarization, astandard anisotropic polysilicon etch is performed to bring the level ofthe polysilicon in the first trench 14 and in the second trench 20 belowthe level of the surface of the first insulating layer 10. The distancefrom the surface should be sufficiently deep such that an implantationbarrier 52, occupying the space overlying the polysilicon, is thickenough to block implanted ions from penetrating the polysilicon.

More specifically, an implantation barrier 52 is then deposited in ablanket fashion. The implantation barrier 52 is processed (for example,using CMP) to make the surface of the implantation barrier 52 co-planaror substantially co-planar with the surface of the first insulatinglayer 10. In this manner, a self aligned structure for ion implantationis formed. The purpose of the implantation barrier 52 is the same as inthe prior illustrative embodiment. The implantation barrier may consistof any material sufficient to perform the aforementioned function. Someillustrative barrier materials were listed above.

In the second embodiment, ion implantation is performed to create alightly doped diffusion (LDD) region as indicated by regions 32 in FIG.5. Following creation of the LDD region, the structure is annealed.Transistor source and drain regions are then formed by further implantsand the structure is again annealed following these additional implants.Alternatively, the annealing may occur after all implants have beenperformed. The source and drain regions are indicated as regions 34 inFIG. 5. Once again, the choices of particular ions and their associatedimplantation energies are dependent upon the desired electricalcharacteristics of the device being fabricated. It should be noted thatthe ion implantation is performed in accordance with standard processingtechniques (for example, through a mask of photo-resistive material thathas been patterned to reveal the desired implant regions.)

The implantation barrier 52 (FIG. 5) may be subsequently removed with aselective etch (for example, chemical) to reveal the polysilicon 50below the implantation barrier 52. Subsequently, electrical connections(not shown) are made in conventional ways to the polysilicon 40 and tothe source and drain regions 34.

A third illustrative embodiment is described below with reference toFIGS. 6 to 10 where an insulating layer 205 is formed on a substrate200. Insulating layer 205 may be Sio₂ and have a substantially uniformdepth. The substrate 200 may be silicon, gallium arsenide, germanium, orother material suitable for use as a substrate and as are known to thoseskilled in the art. There may be one or more layers formed between thesubstrate 200 and the insulating layer 205. The thickness of theinsulating layer 205 varies based on the particular process andtechnology being used and the surface topology of the substrate 200.

Subsequently, a stop layer 210 is formed on the insulating layer 205.The stop layer is, for example, TiN. The stop layer 205 is an etch stoplayer as is described below. A second insulating layer 215 is formed onthe stop layer 205. The second insulating layer is, for example, SiO₂.Next, a resist 220, shown in FIG. 7, is formed on the second insulatinglayer 215 and patterned as is described above and as is well known inthe art. The second insulating layer 215 is etched to form trench 120,shown in FIG. 8. The etch process is a selective etch process thatetches the insulating layer 215 at a higher or substantially higher ratethan the stop layer 210. In other words, the stop layer 210 is resistantto the etch process used to etch insulating layer 215. By using thisprocess, the depth of trench 120 formed during the etch process may beprecisely controlled.

Next, as is shown in FIG. 9, a second resist layer 230 is formed on thesecond insulating layer 215. The second resist layer 230 is patterned asis described above and as is well known. The second insulating layer215, the stop layer 210, and the first insulating layer 205 are etchedusing a process that selectively etches the materials of each layer toform trench 140. In other words, stop layer 210 is not resistant to theetching process used to form trench 140. After etching, the remainingportions of the second resist layer 230 are removed. The trench 140 issimilar to the trench 14 shown in FIGS. 1-5 and trench 120 is similar tothe trench 20 shown in FIGS. 1-5. Once trenches 140 and 120 have beenformed, layers similar to layers 124, 40, 50, and/or 52 may be formed asdescribed above in the first and second embodiments to form polysilicondevices.

FIGS. 11-13 are illustrative devices that may formed using the first,second, and third embodiments. The device shown in FIG. 11 is an SRAMcell. In the embodiment shown in FIG. 11, resistors 300 may be formedusing structures formed with the shallow trenches 120 or 20 and thetransistors 310 may be formed using structures formed in trenches 14 or140. Subsequent metal layers may be formed to interconnect resistors 300and transistors 310 as is well known.

The device shown in FIG. 12 is alternative SRAM cell. In the embodimentshown in FIG. 12, transistors 400 may be formed using structures formedin the shallow trenches 120 or 20 and the transistors 410 may be formedusing structures formed in trenches 14 or 140. Subsequent metal layersmay be formed to interconnect transistors 400 and transistors 410 as iswell known.

The device shown in FIG. 13 is a DRAM cell. In the embodiment shown inFIG. 13, the capacitor 500 may be formed using structures formed in theshallow trench 120 or 12 and the transistor 510 may be formed usingstructures formed in trenches 14 and 140. Subsequent metal layers may beformed to interconnect capacitor 500 and transistor 510 as is wellknown.

Finally, it is to be understood that although the invention is disclosedherein in the context of particular illustrative embodiments, thoseskilled in the art will be able to devise numerous alternativearrangements. Such alternative arrangements, although not explicitlyshown or described herein, embody the principles of the presentinvention and are thus within its spirit and scope.

We claim:
 1. A method for fabricating an integrated circuit comprising:forming a first insulating layer over a substrate; forming a barrierlayer above the first insulating layer; forming a second insulatinglayer above the barrier layer; forming at least a first trench in thesecond insulating layer and not in the first insulating layer; forming asecond trench located adjacent the first trench and through the firstinsulating layer, the barrier layer, and the second insulating layer;forming a third insulating layer in the first and second trenches; andforming an implantation barrier in at least the first and secondtrenches to prevent penetration of implanted ions into portions of thethird insulating layer.
 2. The method of claim 1 further comprisingforming polysilicon in the first trench to form a first structure andforming polysilicon in the second trench to form a second structure. 3.The process according to claim 1 wherein the implantation barrier isformed only in the first and second trenches.
 4. The process accordingto claim 1 further comprising removing the implantation barrier.
 5. Theprocess according to claim 1 further comprising: removing theimplantation barrier; and subsequently forming a polysilicon material inthe first and second trenches.
 6. The method according to claim 1wherein said implantation barrier comprises one of silicon nitride,tantalum nitride, titanium nitride, tungsten nitride, and zirconiumnitride.